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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Switching properties of 2 kV SiC-SIT

✍ Scribed by Onose, H.; Watanabe, A.; Someya, T.; Kobayashi, Y.

Book ID: 111972043
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 353 KB
Volume: 0
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ispsd.2002.1016203

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