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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Conductivity modulation improvement in 6.5 kV trench UMOS insulated gate bipolar transistors

✍ Scribed by Natarajan, R.; Chow, T.P.

Book ID: 111886892
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 416 KB
Volume: 0
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ispsd.2002.1016186

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