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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Fully self-aligned power trench-MOSFET utilising 1 μm pitch and 0.2 μm trench width

✍ Scribed by Peake, S.T.; Grover, R.; Farr, R.; Rogers, C.; Petkos, G.

Book ID: 111878493
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 315 KB
Volume: 0
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ispsd.2002.1016163

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