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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Defect-less trench filling of epitaxial Si growth by H/sub 2/ annealing

✍ Scribed by Yamauchi, S.; Urakami, Y.; Tuji, N.; Yamaguchi, H.

Book ID: 127127668
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 396 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ispsd.2002.1016189

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