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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV

✍ Scribed by Rahimo, M.; Kopta, A.; Eicher, S.; Kaminski, N.; Bauer, F.; Schlapbach, U.; Linder, S.

Book ID: 115484211
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 412 KB
Volume: 0
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ispsd.2002.1016166

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