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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Double-RESURF 700 V n-channel LDMOS with best-in-class on-resistance

✍ Scribed by Hossain, Z.; Imam, M.; Fulton, J.; Tanaka, M.

Book ID: 118233491
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 374 KB
Volume: 0
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ispsd.2002.1016190

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