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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Ultra high switching speed 600 V thin wafer PT-IGBT based on new turn-off mechanism

✍ Scribed by Matsudai, T.; Nakagawa, A.

Book ID: 120089688
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 364 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ISPSD.2002.1016227

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