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Hysteresis-free HfO2 film grown by atomic layer deposition at low temperature

✍ Scribed by J. Shen; C.Y. Zhang; T.T. Xu; A.N. Jiang; Z.Y. Zhang; S. Wang; Q. Chen

Book ID
113937073
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
547 KB
Volume
519
Category
Article
ISSN
0040-6090

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We report on growth behavior, structure, thermal stability and electrical properties of ultrathin (,10 nm) hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl and H O at 300 8C on a bare silicon surface 4 2 or a thin thermally grown SiO -based interlayer. Comp