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Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition

✍ Scribed by Tze Chiang Chen; Cheng-Yi Peng; Chih-Hung Tseng; Ming-Han Liao; Mei-Hsin Chen; Chih-I Wu; Ming-Yau Chern; Pei-Jer Tzeng; Chee Wee Liu


Book ID
114618655
Publisher
IEEE
Year
2007
Tongue
English
Weight
592 KB
Volume
54
Category
Article
ISSN
0018-9383

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Ultrathin HfO2 films grown on silicon by
✍ E.P. Gusev; C. Cabral Jr.; M. Copel; C. D’Emic; M. Gribelyuk πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 584 KB

We report on growth behavior, structure, thermal stability and electrical properties of ultrathin (,10 nm) hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl and H O at 300 8C on a bare silicon surface 4 2 or a thin thermally grown SiO -based interlayer. Comp