Ultrathin HfO2 films grown on silicon by
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E.P. Gusev; C. Cabral Jr.; M. Copel; C. DβEmic; M. Gribelyuk
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Article
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2003
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Elsevier Science
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English
β 584 KB
We report on growth behavior, structure, thermal stability and electrical properties of ultrathin (,10 nm) hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl and H O at 300 8C on a bare silicon surface 4 2 or a thin thermally grown SiO -based interlayer. Comp