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Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperatures

✍ Scribed by Hämäläinen, Jani; Hatanpää, Timo; Puukilainen, Esa; Sajavaara, Timo; Ritala, Mikko; Leskelä, Markku


Book ID
119959738
Publisher
Royal Society of Chemistry
Year
2011
Tongue
English
Weight
394 KB
Volume
21
Category
Article
ISSN
0959-9428

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Transparent and conductive undoped zinc
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## Abstract Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred‐nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C. As zinc and oxygen precursors we used diethylzinc (DEZn)