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HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

✍ Scribed by S.-W. Jeong; H.J. Lee; K.S. Kim; M.T. You; Y. Roh; T. Noguchi; W. Xianyu; J. Jung

Book ID
108289503
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
836 KB
Volume
515
Category
Article
ISSN
0040-6090

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Ultrathin HfO2 films grown on silicon by
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✍ E.P. Gusev; C. Cabral Jr.; M. Copel; C. D’Emic; M. Gribelyuk πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 584 KB

We report on growth behavior, structure, thermal stability and electrical properties of ultrathin (,10 nm) hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl and H O at 300 8C on a bare silicon surface 4 2 or a thin thermally grown SiO -based interlayer. Comp