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Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors

✍ Scribed by Woo-Jun Yoon; Paul R. Berger

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
455 KB
Volume
11
Category
Article
ISSN
1566-1199

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