Hydrogen in silicon: State, reactivity and evolution after ion implantation

✍ Scribed by G.F. Cerofolini; G. Ottaviani

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 408 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90209-2

✦ Synopsis

Hydrogen passivation of interface traps and group 11I acceptors is described in a unified fashion as due to the interaction of atomic hydrogen with dangling bonds'. This picture requires" that the ground state coordination of group III acceptors is" not tetrahedral. Hydrogen can be found in silicon not only in atomic form or bound to a silicon atom to saturate a dangling bond, but also in molecular ~ form. In equilibrium conditions the molecular configuration is the prevailing one up to 500°('. Each of the possible configurations in which hydrogen can be found plays a role in the explanation of the complex phenomenology associated with hydrogen implantation (both at room attd liquid nitrogen temperature) and annealing.