The gettering of boron by an ion-implanted antimony layer in silicon : Richard B. Fair and Paul N. Pappas. Solid State Electronics18, 1131 (1975)

• Publisher: Elsevier Science
• Year: 1976
• Tongue: English
• Weight: 59 KB
• Volume: 15
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(76)90370-x