## Abstract GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses ranging from 10^12^ to 10^16^ cm^β2^. This gradually modified their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Ellipsometry and near infrared refle
β¦ LIBER β¦
Hydrogen doping of silica by ion beam enhanced hydration
β Scribed by G. Della Mea; C. Rossi-Alvarez; G. Mazzi; G. Bezzon; J. Chaumont; J.-C. Dran; M. Mendenhall; J.-C. Petit
- Book ID
- 114168175
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 336 KB
- Volume
- 19-20
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Defect tuning of GaAs doping superlattic
β
Brink, D. J. ;Haile, K. M. ;Kunert, H. W.
π
Article
π
2005
π
John Wiley and Sons
π
English
β 173 KB
Features of silica luminescence induced
β
S.I. Kononenko; O.V. Kalantaryan; V.I. Muratov; V.P. Zhurenko
π
Article
π
2006
π
Elsevier Science
π
English
β 189 KB
Synthesis of silicon nitride films by io
β
Liu Xianghuai; Xue Bin; Zheng Zhihong; Zhou Zuyao; Zou Shichang
π
Article
π
1989
π
Elsevier Science
π
English
β 505 KB
Synthesis of titanium dioxide films by i
β
Feng Zhang; Zhihong Zheng; Duo Liu; Yingjun Mao; Yu Chen; Zhuyao Zhou; Shiqi Yan
π
Article
π
1997
π
Elsevier Science
π
English
β 555 KB
Synthesis of gradient thin films by ion
β
Liu Xianghuai; Zhou Jiankun; Zou Shichang; S. Taniguchi; A. SchrΓΆer; G.K. Wolf
π
Article
π
1991
π
Elsevier Science
π
English
β 286 KB
Gradient thin films consisting of Si3N 4 were prepared on metals (nickel, steel, AI-C fibre, Ni3AI etc.) by ion-beam-enhanced deposition. The coating deposited on one side of the sample has a high resistance (10 s f2) while that on the other side has a low resistance (1 g2) with a gradual change in
Characterization of TiN coatings prepare
β
X.Y. Li; F.J. Wang; T.C. Ma; Y.K. Wang
π
Article
π
1991
π
Elsevier Science
π
English
β 332 KB