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Hydrogen depth profiling with sub-nm resolution in high-resolution ERD

✍ Scribed by Kenji Kimura; Kaoru Nakajima; Hideki Imura


Book ID
114170129
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
104 KB
Volume
140
Category
Article
ISSN
0168-583X

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Depth strain profile with sub-nm resolut
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## Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub‐nanometer resolution and high strain sensitivity that the thin Si cap