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Homoepitaxial SiC deposition by MBE with Si and monomethlysilane

✍ Scribed by M. Komatz; K. Matsuishi; S. K. Hong; T. Yao


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
592 KB
Volume
3
Category
Article
ISSN
1862-6351

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Simulation of quality of SiC/Si interfac
✍ D. V. Kulikov; A. A. Schmidt; S. A. Korolev; F. M. Morales; Th. Stauden; Yu. V. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 112 KB

In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i