Simulation of quality of SiC/Si interfac
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D. V. Kulikov; A. A. Schmidt; S. A. Korolev; F. M. Morales; Th. Stauden; Yu. V.
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Article
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2006
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John Wiley and Sons
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English
β 112 KB
In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i