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High selectivity plasma etching of InN over GaN

✍ Scribed by Hyun Cho; J. Hong; T. Maeda; S. M. Donovan; C. R. Abernathy; S. J. Pearton; R. J. Shul; J. Han


Book ID
107457722
Publisher
Springer US
Year
1998
Tongue
English
Weight
123 KB
Volume
27
Category
Article
ISSN
0361-5235

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Microwave Plasma Etching of GaN in Nitro
✍ Frayssinet, E. ;Prystawko, P. ;Leszczynski, M. ;Domagala, J. ;Knap, W. ;Robert, πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 78 KB πŸ‘ 1 views

Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize