Exposure of defects in GaN by plasma etching
β Scribed by H.W. Choi; C. Liu; M.G. Cheong; J. Zhang; S.J. Chua
- Book ID
- 106019076
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 197 KB
- Volume
- 80
- Category
- Article
- ISSN
- 1432-0630
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Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize
Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is as