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ECR plasma etching of GaN, AlN and InN using iodine or bromine chemistries

โœ Scribed by Abernathy, C.R.; Vartuli, C.B.; Pearton, S.J.


Book ID
118137327
Publisher
The Institution of Electrical Engineers
Year
1994
Tongue
English
Weight
251 KB
Volume
30
Category
Article
ISSN
0013-5194

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## Abstract The structural properties of 2โ€‰ยตm thick Nโ€face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20โ€‰nm AlN and 40โ€‰nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th