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High resolution X-ray diffraction study of the Si doping influence on columnar crystal growth of GaN layers

✍ Scribed by V.S. Harutyunyan; E. Zielińska-Rohozińska; M. Regulska


Book ID
117622152
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
165 KB
Volume
362
Category
Article
ISSN
0925-8388

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The stability of the infinite-layer \(\mathrm{SrCuO}_{2}\) upon heating in air has been investigated by high-temperature \(\mathrm{X}\)-ray diffraction. Above \(300^{\circ} \mathrm{C}\) the infinite-layer \(\mathrm{SrCuO}_{2}\) reacted gradually with \(\mathrm{CO}_{2}\) in air to form \(\mathrm{SrCO