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High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers

✍ Scribed by Masihhur R. Laskar; Tapas Ganguli; Nirupam Hatui; A.A. Rahman; M.R. Gokhale; Arnab Bhattacharya


Book ID
108166143
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
373 KB
Volume
315
Category
Article
ISSN
0022-0248

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High-resolution X-ray diffraction study
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## Abstract We report results of X‐ray investigations of tellurium‐doped GaAs~1–__x__~ P~__x__~ (with 0.07 ≀ __x__ ≀ 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective