High-resolution X-ray diffraction study of CZ-grown GaAsP crystals

✍ Scribed by Kowalski, G. ;Gronkowski, J. ;Czyżak, A. ;Słupiński, T. ;Borowski, J.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 354 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200675660

✦ Synopsis

Abstract

We report results of X‐ray investigations of tellurium‐doped GaAs~1–x~ P~x~ (with 0.07 ≤ x ≤ 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective applications. Our samples were studied using high‐resolution diffractometry which allowed to obtain both rocking curves and reciprocal space maps of the diffracted intensity, as well as using plane‐wave topography in the reflection mode. Weak reflections were also used to study the influence of Te atoms on the compound lattice. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)