✦ LIBER ✦

High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma

✍ Scribed by Hyoun Woo Kim; Byong-Sun Ju; Chang-Jin Kang

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characteristics of Ru etching using O2/C

✍ Hyoun Woo Kim 📂 Article 📅 2002 🏛 TechnoPress 🌐 English ⚖ 764 KB

Characteristics of Ir etching using Ar/C

✍ SE-GEUN PARK; CHIN-WOO KIM; HO-YOUNG SONG; HYOUN WOO KIM; JU HYUN MYUNG; SUKHO J 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 272 KB

Reactive ion etching of SiC using C2F6/O

✍ S. -M. Kong; H. -J. Choi; B. -T. Lee; S. -Y. Han; J. L. Lee 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 149 KB

High rate sapphire (Al2O3) etching in in

✍ D.W. Kim; C.H. Jeong; K.N. Kim; H.Y. Lee; H.S. Kim; Y.J. Sung; G.Y. Yeom 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 302 KB

Inductively coupled plasma etching of II

✍ J.W Lee; E.S Lambers; C.R Abernathy; S.J Pearton; R.J Shul; F Ren; W.S Hobson; C 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 881 KB

High Etch Rate Gallium Nitride Processin

✍ Ryan, M. E. ;Camacho, A. C. ;Bhardwaj, J. K. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB