The รlms addressed here were grown using adamantane vapour in รowing argon/nitrogen mixtures in an (C 10 H 16 ) inductively-coupled plasma processing (ICP) vacuum rig. The รlms were characterized by XPS, AES, infrared spectroscopy (Fourier transform infrared (FTIR) in transmission) and atomic force
โฆ LIBER โฆ
High Etch Rate Gallium Nitride Processing Using an Inductively Coupled Plasma Source
โ Scribed by Ryan, M. E. ;Camacho, A. C. ;Bhardwaj, J. K.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 113 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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