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High-Rate Deposition of Amorphous Silicon

✍ Scribed by B. G. Budagyan; A. A. Sherchenkov; A. E. Berdnikov; V. D. Chernomordik

Book ID
111566430
Publisher
Springer
Year
2000
Tongue
English
Weight
152 KB
Volume
29
Category
Article
ISSN
1063-7397

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The combined influence of RF-power density (RFP) and silane flow-rate (q~) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane