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Amorphous silicon deposited at high growth rates near the onset of microcrystallinity

โœ Scribed by Yoram Lubianiker; Yanyang Tan; J.David Cohen; Gautam Ganguly

Book ID
117144408
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
114 KB
Volume
266-269
Category
Article
ISSN
0022-3093

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The combined influence of RF-power density (RFP) and silane flow-rate (q~) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane