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Device quality hydrogenated amorphous silicon films deposited at high growth rates

✍ Scribed by Debabrata Das; S.N. Sharma; Ratnabali Banerjee


Book ID
117148139
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
581 KB
Volume
211
Category
Article
ISSN
0022-3093

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The combined influence of RF-power density (RFP) and silane flow-rate (q~) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane