𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Device grade hydrogenated polymorphous silicon deposited at high rates

✍ Scribed by Y.M. Soro; A. Abramov; M.E. Gueunier-Farret; E.V. Johnson; C. Longeaud; P. Roca i Cabarrocas; J.P. Kleider


Book ID
116671002
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
146 KB
Volume
354
Category
Article
ISSN
0022-3093

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


PECVD deposition of device-quality intri
✍ Julio CΓ‘rabe; JosΓ© Javier GandΓ­a; MarΓ­a Teresa GutiΓ©rrez πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 269 KB

The combined influence of RF-power density (RFP) and silane flow-rate (q~) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane