✦ LIBER ✦

High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

✍ Scribed by K. G. Fertitta; A. L. Holmes; F. J. Ciuba; R. D. Dupuis; F. A. Ponce

Book ID: 112817035
Publisher: Springer US
Year: 1995
Tongue: English
Weight: 726 KB
Volume: 24
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02659684

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High Quality GaN Layers Grown by Metalor

High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates

✍ Strittmatter, A. ;Krost, A. ;Bläsing, J. ;Bimberg, D. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 155 KB 👁 1 views

GaN homoepitaxial layers grown by metalo

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

✍ Leszczynski, M.; Beaumont, B.; Frayssinet, E.; Knap, W.; Prystawko, P.; Suski, T 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 291 KB

Observation of compensation in GaN films

Observation of compensation in GaN films grown by metalorganic chemical vapor deposition

✍ P. Chen; S.J. Chua; Y.D. Zheng 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 108 KB

Red emission from Eu-doped GaN luminesce

Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

✍ Pan, M.; Steckl, A. J. 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 364 KB

High-quality single GaAs quantum wells g

High-quality single GaAs quantum wells grown by metalorganic chemical vapor deposition

✍ Miller, R. C.; Dupuis, R. D.; Petroff, P. M. 📂 Article 📅 1984 🏛 American Institute of Physics 🌐 English ⚖ 581 KB

Characterization of AlGaN/GaN Heterostru

Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition

✍ C.J. Eiting; D.J.H. Lambert; H.K. Kwon; B.S. Shelton; M.M. Wong; T.G. Zhu; R.D. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 144 KB 👁 2 views