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Observation of compensation in GaN films grown by metalorganic chemical vapor deposition

✍ Scribed by P. Chen; S.J. Chua; Y.D. Zheng


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
108 KB
Volume
4
Category
Article
ISSN
1369-8001

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We report the growth, fabrication and characterization of high-quality AlGaN/GaN solar-blind p-i-n and MSM photodetectors by low-pressure metalorganic chemical vapor deposition (MOCVD). The epitaxial layers were grown on double-polished c-plane (0001) sapphire substrates to allow for back-side illum