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High quality AlGaN epilayers grown on sapphire using SiNx interlayers

✍ Scribed by K. Forghani; M. Klein; F. Lipski; S. Schwaiger; J. Hertkorn; R.A.R. Leute; F. Scholz; M. Feneberg; B. Neuschl; K. Thonke; O. Klein; U. Kaiser; R. Gutt; T. Passow

Book ID
108166136
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
826 KB
Volume
315
Category
Article
ISSN
0022-0248

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## Abstract Crack‐free and low‐dislocation‐density AlGaN was successfully grown on grooved AlN layer. UV light‐emitting diodes (LEDs) with a peak wavelength of 330 nm on these AlGaN films were fabricated. The efficiency of the UV LEDs is found to be strongly affected by the crystalline quality of t