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High quality GaN grown on silicon(111) using a Si[sub x]N[sub y] interlayer by metal-organic vapor phase epitaxy
✍ Scribed by Cheng, Kai; Leys, M.; Degroote, S.; Germain, M.; Borghs, G.
- Book ID
- 120155717
- Publisher
- American Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 619 KB
- Volume
- 92
- Category
- Article
- ISSN
- 0003-6951
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