High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

✍ Scribed by Kung, P.; Saxler, A.; Zhang, X.; Walker, D.; Wang, T. C.; Ferguson, I.; Razeghi, M.

• Book ID: 121709158
• Publisher: American Institute of Physics
• Year: 1995
• Tongue: English
• Weight: 309 KB
• Volume: 66
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.114242