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Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

✍ Scribed by Isamu Akasaki; Hiroshi Amano; Yasuo Koide; Kazumasa Hiramatsu; Nobuhiko Sawaki

No coin nor oath required. For personal study only.

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