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High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate

✍ Scribed by Iida, K. ;Watanabe, H. ;Takeda, K. ;Nagai, T. ;Sumii, T. ;Nagamatsu, K. ;Kawashima, T. ;Balakrishnan, K. ;Iwaya, M. ;Kamiyama, S. ;Amano, H. ;Akasaki, I. ;Bandoh, A.

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
269 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Crack‐free and low‐dislocation‐density AlGaN was successfully grown on grooved AlN layer. UV light‐emitting diodes (LEDs) with a peak wavelength of 330 nm on these AlGaN films were fabricated. The efficiency of the UV LEDs is found to be strongly affected by the crystalline quality of the underlying AlN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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