## Abstract Al~0.25~Ga~0.75~N films were grown on a grooved‐Al~0.25~Ga~0.75~N/ AlN/sapphire template by MOVPE. The dislocation density on the grooved areas was as low as 1 × 10^8^ cm^–2^. We fabricated a UVA light‐emitting diode grown on such an AlGaN underlying layer exhibiting an output power of
High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
✍ Scribed by Tsuzuki, Hirotoshi (author);Mori, Fumiaki (author);Takeda, Kenichiro (author);Ichikawa, Tomoki (author);Iwaya, Motoaki (author);Kamiyama, Satoshi (author);Amano, Hiroshi (author);Akasaki, Isamu (author);Yoshida, Harumasa (author);Kuwabara, Masakazu (author);Yamashita, Yoji (author);Kan, Hirofumi (author)
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 500 KB
- Volume
- 206
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Crack‐free and low‐dislocation‐density AlGaN was successfully grown on grooved AlN layer. UV light‐emitting diodes (LEDs) with a peak wavelength of 330 nm on these AlGaN films were fabricated. The efficiency of the UV LEDs is found to be strongly affected by the crystalline quality of t