High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures

✍ Scribed by A. V. Murashova; N. A. Pikhtin; N. V. Fetisova; A. V. Lyutetskiĭ; L. S. Vavilova; V. V. Vasil’eva; A. A. Marmalyuk; Yu. A. Ryaboshtan; I. S. Tarasov

• Book ID: 111450083
• Publisher: SP MAIK Nauka/Interperiodica
• Year: 2008
• Tongue: English
• Weight: 215 KB
• Volume: 34
• Category: Article
• ISSN: 1063-7850
• DOI: 10.1134/s1063785008070055