High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

✍ Scribed by A. V. Lyutetskiy; N. A. Pikhtin; N. V. Fetisova; A. Yu. Leshko; S. O. Slipchenko; Z. N. Sokolova; Yu. A. Ryaboshtan; A. A. Marmalyuk; I. S. Tarasov

• Book ID: 111444493
• Publisher: Springer
• Year: 2009
• Tongue: English
• Weight: 148 KB
• Volume: 43
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782609120057