Ga0.8In0.2As/GaAs/Ga0.51In0.49P buried r
Ga0.8In0.2As/GaAs/Ga0.51In0.49P buried ridge structure single quantum well laser emitting at 0.98 μm
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Mobarhan, K.; Razeghi, M.; Blondeau, R.
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Article
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1992
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The Institution of Electrical Engineers
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English
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