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Near 10 μm intervalence subband optical transitions in p-type In 0.49Ga0.51P-GaAs quantum well structures

✍ Scribed by Chen, H.H.; Yeong-Her Wang; Mau-Phon Houng

No coin nor oath required. For personal study only.

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Ga0.8In0.2As/GaAs/Ga0.51In0.49P buried r

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