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Effects of interdiffusion-induced strain in Ga0.51In0.49P-GaAs intermixed quantum wells

✍ Scribed by Micallef, J.; Brincat, A.; Wai-Chee Shiu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interdiffusion and thermally induced str

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Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51

✍ Wei-Chou Wang; Jing-Yuh Chen; Hsi-Jen Pan; Shun-Ching Feng; Kuo-Hui Yu; Wen-Chau 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 178 KB

High power, 0.98 μm, Ga0.8In0.2As/GaAs/G

✍ Mobarhan, K.; Razeghi, M.; Marquebielle, G.; Vassilaki, E. 📂 Article 📅 1992 🏛 American Institute of Physics 🌐 English ⚖ 519 KB

Near 10 μm intervalence subband optical

✍ Chen, H.H.; Yeong-Her Wang; Mau-Phon Houng 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 664 KB

Ga0.8In0.2As/GaAs/Ga0.51In0.49P buried r

✍ Mobarhan, K.; Razeghi, M.; Blondeau, R. 📂 Article 📅 1992 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 226 KB

Conduction‐ and valence‐band offsets in

✍ Biswas, D.; Debbar, N.; Bhattacharya, P.; Razeghi, M.; Defour, M.; Omnes, F. 📂 Article 📅 1990 🏛 American Institute of Physics 🌐 English ⚖ 535 KB