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High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition

✍ Scribed by P. F. Carcia; R. S. Mclean; M. H. Reilly


Book ID
126642054
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
366 KB
Volume
88
Category
Article
ISSN
0003-6951

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## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p