Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics
β Scribed by Yang, Jaehyun ;Park, Joong Keun ;Kim, Sunkook ;Choi, Woong ;Lee, Sangyoon ;Kim, Hyoungsub
- Book ID
- 112181100
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 463 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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## Abstract The performance of topβgate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4βvinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p
We report on the fabrication of ultraviolet (UV)-sensing top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) polymer gate dielectric on glass substrate. Our top-gate ZnO-TFT showed a field-effect mobility of 0.05 cm 2 /V s, maximum saturation current of 0.11 A at a gate bias of