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High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

✍ Scribed by Chen, Wanjun; Wong, King-Yuen; Huang, Wei; Chen, Kevin J.

Book ID: 126837332
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 550 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2951615

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