High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction
β Scribed by Wang, W. I.; Mendez, E. E.; Iye, Y.; Lee, B.; Kim, M. H.; Stillman, G. E.
- Book ID
- 121742643
- Publisher
- American Institute of Physics
- Year
- 1986
- Tongue
- English
- Weight
- 330 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.337227
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π SIMILAR VOLUMES
Zinc delta-doped GaAs and pseudomorphic GaAs/In 0.2 Ga 0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. Fro
## As heierostmctures grown on GaAs sub- strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterost