Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures
✍ Scribed by R.T. Hsu; Y.S. Lin; J.S. Su; W.C. Hsu; Y.H. Wu; M.J. Kao
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 78 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Zinc delta-doped GaAs and pseudomorphic GaAs/In 0.2 Ga 0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. From secondary-ion mass spectroscopy and Hall measurement, we conclude that zinc delta-doping can form an excellent abrupt profile (fullwidth at half maximum is of 10 nm) and offer a high two-dimensional hole gas sheet density (as high as 1×10 13 cm -2 ). By adopting a strained InGaAs material as the active channel and by carefully modulating the spacer layer thickness, one can obtain a significantly enhanced hole mobility.