✦ LIBER ✦

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

✍ Scribed by Meyer, David J.; Deen, David A.; Storm, David F.; Ancona, Mario G.; Katzer, D. Scott; Bass, Robert; Roussos, Jason A.; Downey, Brian P.; Binari, Steven C.; Gougousi, Theodosia; Paskova, Tanya; Preble, Edward A.; Evans, Keith R.

Book ID: 120059562
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 650 KB
Volume: 34
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2228463

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-Performance Low-Leakage-Current AlN

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

✍ Medjdoub, F.; Zegaoui, M.; Ducatteau, D.; Rolland, N.; Rolland, P. A. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 341 KB

High-Performance AlN/GaN HEMTs on Sapphi

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

✍ Chabak, Kelson D.; Walker, Dennis E.; Johnson, Michael R.; Crespo, Antonio; Dabi 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 333 KB

Transport properties of SiO 2 /AlInN/AlN

Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

✍ Lachab, M; Sultana, M; Fareed, Q; Husna, F; Adivarahan, V; Khan, A 📂 Article 📅 2014 🏛 Institute of Physics 🌐 English ⚖ 586 KB

Demonstration of low leakage current and

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

✍ Medjdoub, F.; Zegaoui, M.; Rolland, N.; Rolland, P. A. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 797 KB

Explanation of threshold voltage scaling

Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

✍ A. Alexewicz; C. Ostermaier; C. Henkel; O. Bethge; J.-F. Carlin; L. Lugani; N. G 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 389 KB