𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High-depth-resolution SIMS analysis for InGaAs/InP interfaces

✍ Scribed by Y. Gao; I. Ardelean; D. Renard; B. Rose; Y. Jin

Book ID
103615724
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
496 KB
Volume
50
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

High Depth Resolution SIMS Analysis with
High Depth Resolution SIMS Analysis with Low-energy Grazing O2+ Beams
✍ Jiang, Zhi-Xiong; Alkemade, Paul F. A.; Algra, Eelke; Radelaar, S. πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 334 KB

By the use of a deceleration electrode in the primary beam line of a magnetic sector SIMS instrument, an O 2 primary beam of variable energy and angle has been produced. The SIMS measurements of ultrathin Ge and B layers in Si were performed with low-energy (0.7-2 keV) and grazingly incident (50-75Γ„