High Depth Resolution SIMS Analysis with Low-energy Grazing O2+ Beams

✍ Scribed by Jiang, Zhi-Xiong; Alkemade, Paul F. A.; Algra, Eelke; Radelaar, S.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 334 KB
• Volume: 25
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199704)25:4<285::aid-sia235>3.0.co;2-0

✦ Synopsis

By the use of a deceleration electrode in the primary beam line of a magnetic sector SIMS instrument, an O 2 primary beam of variable energy and angle has been produced. The SIMS measurements of ultrathin Ge and B layers in Si were performed with low-energy (0.7-2 keV) and grazingly incident (50-75Ä) ions. Consequently, O 2 ' ultrahigh depth resolution with characteristic exponential leading and decay lengths of 0.25 and 0.9 nm, respectively, and 1.6 nm full width at half-maximum for a Ge delta layer was obtained. A depth proÐle analysis without any appreciable loss in depth resolution was achieved down to a depth of 1 lm with a 1 keV 60Ä beam. O 2 ' Furthermore, good dynamic range, acceptable detection limit and moderate sputtering rates were achieved in this ultrahigh depth resolution mode.

1997 by John Wiley & Sons. Ltd.